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june 2016 docid029386 rev 1 1 / 12 this is information on a product in full production. www.st.com STF11N60DM2 n - channel 600 v, 0.370 typ., 10 a mdmesh? dm2 power mosfet in a to - 220fp package datasheet - production data figure 1 : internal schematic diagram features order code v ds @ t jmax. r ds(on) max. i d p tot STF11N60DM2 650 v 0.420 10 a 25 w ? fast - recovery body diode ? extremely low gate charge and input capacitance ? low on - resistance ? 100% avalanche tested ? extremely high dv/dt ruggedness ? zener - protected applications ? switching applications description this high voltage n - channel power mosfet is part of the mdmesh? dm2 fast recovery diode series. it offers very low recovery charge (q rr ) and time (t rr ) combined with low r ds(on) , rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and zvs phase - shift c onverters. table 1: device summary order code marking package packing STF11N60DM2 11n60dm2 to - 220fp tube t o-220f p 1 2 3
contents STF11N60DM2 2 / 12 docid029386 rev 1 contents 1 electrical ratings ................................ ................................ ............. 3 2 electrical characteristics ................................ ................................ 4 2.1 electrical characteristics (curves) ................................ ...................... 6 3 test circuits ................................ ................................ ..................... 8 4 package information ................................ ................................ ....... 9 4. 1 to - 220fp package information ................................ ........................ 9 5 revision history ................................ ................................ ............ 11
STF11N60DM2 electrical ratings docid029386 rev 1 3 / 12 1 electrical ratings table 2: absolute maximum ratings symbol parameter value unit v gs gate - source voltage 25 v i d drain current (continuous) at t case = 25 c 10 a drain current (continuous) at t case = 100 c 6.3 i dm (1) drain current (pulsed) 40 a p tot total dissipation at t case = 25 c 25 w dv/dt (2) peak diode recovery voltage slope 40 v/ns dv/dt (3) mosfet dv/dt ruggedness 50 v iso (4) insulation withstand voltage (rms) from all three leads to external heat sink 2.5 kv t stg storage temperature range - 55 to 150 c t j operating junction temperature range notes: (1) pulse width is limited by safe operating area. (2) i sd 10 a, di/dt=900 a/s; v ds peak < v (br)dss ,v dd = 400 v (3) v ds 480 v. (4) t = 1 s; t c = 25 c table 3: thermal data symbol parameter value unit r thj - case thermal resistance junction - case 5 c/w r thj - amb thermal resistance junction - ambient 62.5 table 4: avalanche characteristics symbol parameter value unit i ar (1) avalanche current, repetitive or not repetitive 2.5 a e as (2) single pulse avalanche energy 250 mj notes: (1) pulse width limited by t jmax (2) starting t j = 25 c, i d = i ar , v dd = 50 v.
electrical characteristics STF11N60DM2 4 / 12 docid029386 rev 1 2 electrical characteristics (t case = 25 c unless otherwise specified) table 5: static symbol parameter test conditions min. typ. max. unit v (br)dss drain - source breakdown voltage v gs = 0 v, i d = 1 ma 600 v i dss zero gate voltage drain current v gs = 0 v, v ds = 600 v 1.5 a v gs = 0 v, v ds = 600 v, t case = 125 c (1) 100 i gss gate - body leakage current v ds = 0 v, v gs = 25 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3 4 5 v r ds(on) static drain - source on - resistance v gs = 10 v, i d = 5 a 0.370 0.420 notes: (1) defined by design, not subject to production test. table 6: dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 100 v, f = 1 mhz, v gs = 0 v - 614 - pf c oss output capacitance - 32 - c rss reverse transfer capacitance - 1.08 - c oss eq. (1) equivalent output capacitance v ds = 0 to 480 v, v gs = 0 v - 57 - pf r g intrinsic gate resistance f = 1 mhz, i d = 0 a - 6.2 - q g total gate charge v dd = 480 v, i d = 10 a, v gs = 10 v (see figure 15: "test circuit for gate charge behavior" ) - 16.5 - nc q gs gate - source charge - 3.8 - q gd gate - drain charge - 9.2 - notes: (1) c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss . table 7: switching times symbol parameter test conditions min. typ. max. unit t d(on) turn - on delay time v dd = 300 v, i d = 5 a r g = 4.7 , v gs = 10 v (see figure 14: "test circuit for resistive load switching times" and figure 19: "switching time waveform" ) - 11.7 - ns t r rise time - 6.3 - t d(off) turn - off delay time - 31 - t f fall time - 9.5 -
STF11N60DM2 electrical characteristics docid029386 rev 1 5 / 12 table 8: source - drain diode symbol parameter test conditions min. typ. max. unit i sd (1) source - drain current - 10 a i sdm (2) source - drain current (pulsed) - 40 a v sd (3) forward on voltage v gs = 0 v, i sd = 10 a - 1.6 v t rr reverse recovery time i sd = 10 a, di/dt = 100 a/s, v dd = 60 v (see figure 16: "test circuit for inductive load switching and diode recovery times" ) - 90 ns q rr reverse recovery charge - 248 c i rrm reverse recovery current - 5.5 a t rr reverse recovery time i sd = 10 a, di/dt = 100 a/s, v dd = 60 v, t j = 150 c (see figure 16: "test circuit for inductive load switching and diode recovery times" ) - 160 ns q rr reverse recovery charge - 664 nc i rrm reverse recovery current - 8.3 a notes: (1) limited by maximum junction temperature. (2) pulse width is limited by safe operating area. (3) pulse test: pulse duration = 300 s, duty cycle 1.5%. table 9: gate - source zener diode symbol parameter test conditions min. typ. max. unit v (br)gso gate - source breakdown voltage i gs = 250 a, i d = 0 a 30 - - v the built - in back - to - back zener diodes are specifically designed to enhance the esd performance of the device. the zener voltage facilitates efficient and cost - effective device integrity protection, thus eliminating the need for additional external componentry.
electrical characteristics STF11N60DM2 6 / 12 docid029386 rev 1 2.1 electrical characteristics (curves) figure 2 : safe op erating area figure 3 : thermal impedance figure 4 : output characteristics figure 5 : transfer characteristics figure 6 : gate charge vs gate - source voltage figure 7 : static drain - source on - resistance
STF11N60DM2 electrical characteristics docid029386 rev 1 7 / 12 figure 8 : capacitance variations figure 9 : normalized gate threshold voltage vs temperature figure 10 : normalized on - resistance vs temperature figure 11 : normalized v(br)dss vs temperature figure 12 : output capacitance stored energy figure 13 : sou rce - drain diode forward characteristics
test circuits STF11N60DM2 8 / 12 docid029386 rev 1 3 test circuits figure 14 : test circuit for resistive load switching times figure 15 : test circuit for gate charge behavior figure 16 : test circuit for inductive load switching and diode recovery times figure 17 : unclamped inductive load test circuit figure 18 : unclamped inductive waveform figure 19 : switching time waveform
STF11N60DM2 package information docid029386 rev 1 9 / 12 4 package information in order to meet environment al requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark . 4.1 to - 220fp package information figure 20 : to - 220fp package outline 7012510_ r ev_k_b
package in formation STF11N60DM2 10 / 12 docid029386 rev 1 table 10: to - 220fp package mechanical data dim. mm min. typ. max. a 4.4 4.6 b 2.5 2.7 d 2.5 2.75 e 0.45 0.7 f 0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h 10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2
STF11N60DM2 revision history docid029386 rev 1 11 / 12 5 revision history table 11: document revision history date revision changes 1 7 - j un - 2016 1 first release.
STF11N60DM2 12 / 12 docid029386 rev 1 important notice C please read carefully stmicroelectronics nv and its subsidiaries (st) reserve the right to make changes, corrections, enhancements, modifications , and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant information on st products before placing orders. st products are sold pursuant to sts terms and conditions of sale in place at the time of or der acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and s t assumes no liability for application assistance or the design of purchasers products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information se t forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2016 stmicroelectronics C all rights reserved

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